Threading dislocation density
GaN on Sapphire wafer
Step and Repeat mode
- High resolution cathodoluminescence: individual structures, dislocations
- typical time/image: 2s, monochromatic map
- <10 min per 150mm wafer at 50 images / wafer
automated image analysis
- Threading dislocation density – 3.1E8 cm-2
- Use case: MOCVD deposition control