Threading dislocation density

GaN on Sapphire wafer

Step and Repeat mode

  • High resolution cathodoluminescence: individual structures, dislocations
  • typical time/image: 2s, monochromatic map
  • <10 min per 150mm wafer at 50 images / wafer

automated image analysis

  • Threading dislocation density – 3.1E8 cm-2
  • Use case: MOCVD deposition control