Defect counting threading dislocation in GaN
Threading dislocation density
GaN on Sapphire wafer
Step and Repeat mode
- High resolution cathodoluminescence: individual structures, dislocations
- typical time/image: 2s, monochromatic map
- <10 min per 150mm wafer at 50 images / wafer
automated image analysis
- Threading dislocation density – 3.1E8 cm-2
- Use case: MOCVD deposition control
SiC substrate quality control
Defect inspection & classification
Main advantages of Attolight CL
- High resolution cathodoluminescence: defects
- typical time/image: 3 minutes, hyperspectral map
- 40 min / 150mm wafer for 10 images / wafer
Detected defects
- Green band: 3C-SiC inclusions in 4H-SiC
- Blue band: point defects
- Red band: basal plane dislocation sheet (dark zone)
- Dark lines: stacking faults
- Dark points: dislocations
- Automated defect classification classify defects