Full Wafer Cathodoluminescence Microscope
The Säntis 300 is an automated process control system for wafers up to 300 mm, offering large field-of-view, fast scanning, and simultaneous SEM imaging and CL spectra acquisition.
About our Full Wafer Cathodoluminescence-SEM Equipment
The system's quantitative CL technology offers unparalleled speed, accuracy, and repeatability with a large 300 μm field of view. Multiple acquisition modes enable detailed defect analysis, material inhomogeneity mapping, and dynamic process tracking, such as dopant activation or elemental fluctuations.
Small-diameter wafers and miscellaneously-shaped substrates can be manually affixed to larger susceptors for automated handling by the tool, making the Säntis 300 well-suited to failure analysis and research applications where quick turnaround time is important.
About our Full Wafer Cathodoluminescence Microscope
The standard Säntis 300 configuration includes a top-loading loadlock into which wafers are manually placed using a wafer wand. The loadlock facilitates quick loading and unloading operations, increasing throughput compared to our Allalin system. The tool can be upgraded to include support for wafer cassettes (FOUPs) or even a full EFEM with automated wafer handling for integration in fully-automated fabs.
- Fully automated quantitativeCL metrology
- Simultaneous SEM imaging & spectra acquisition
- High throughput & automated wafer handling
- Wafer bow mapping & alignment
- Loadlock for fast sample exchange
- Loadlock for rapid sample loading and unloading
System Configurations: Includes manual or automated loading options for enhanced throughput, with potential upgrades for full automation. It is optimized for cleanroom environments and equipped with height mapping sensors to maintain precision during measurements.
Trusted by top semiconductor companies and prestigious research institutes worldwide
Related Applications Using the Säntis 300
Discover how the Allalin platform can support your research.
Non-destructive quality control of micron-sized light emitting diodes
Comprehensive defect review and classification for SiC
