Step & Repeat mode, cross-section

  • Each alloy has a distinct spectral signature: band edge emission
  • C-compensated GaN easily distinguished
  • Growth defect in GaN:C leads to GaN:UID punch-through defect
  • Threading dislocation signature visible
  • Pixel size 40 nm, acquisition time 160s
Chronos-Gan-Hemt-Defect-Detection-Nanostructure-Characterization-Composition-and-Doping-Metrology-Materials-Characterization-Attolight-Cathodoluminescence