Allalin-Chronos-GaAs-Nanostructure-Characterization-Doping-Metrology-Materials-Characterization-Attolight-Cathodoluminescence

GaAs nanowire

High resolution SEM and CL map of GaAs nanowire.

The GaAs spectra from structures with varying n-type doping allow to precisely determine the doping level in the nanowires.

(Nanoletters, 17 (11), pp. 6667-6675 (2017))


Chronos-Gan-Hemt-2-Defect-Detection-Nanostructure-Characterization-Composition-and-Doping-Metrology-Materials-Characterization-Attolight-Cathodoluminescence

GaN HEMT

Step & Repeat mode, cross-section

  • Each alloy has a distinct spectral signature: band edge emission
  • C-compensated GaN easily distinguished
  • Growth defect in GaN:C leads to GaN:UID punch-through defect
  • Threading dislocation signature visible
  • Pixel size 40 nm, acquisition time 160s