GaAs nanowire
High resolution SEM and CL map of GaAs nanowire.
The GaAs spectra from structures with varying n-type doping allow to precisely determine the doping level in the nanowires.
(Nanoletters, 17 (11), pp. 6667-6675 (2017))
GaN HEMT
Step & Repeat mode, cross-section
- Each alloy has a distinct spectral signature: band edge emission
- C-compensated GaN easily distinguished
- Growth defect in GaN:C leads to GaN:UID punch-through defect
- Threading dislocation signature visible
- Pixel size 40 nm, acquisition time 160s
